The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2015
Filed:
Mar. 13, 2013
Finisar Corporation, Sunnyvale, CA (US);
Ralph H. Johnson, Murphy, TX (US);
Finisar Corporation, Sunnyvale, CA (US);
Abstract
A laser active region can include a quantum well barrier having GaPSb. The active region can include one or more quantum wells, and a quantum well barrier having GaPSb bounding each side of each of the one or more quantum wells. The quantum well barrier can be GaPSb, where w ranges from about 0.12 to about 0.25 mole fraction, and can have a thickness of from about 20 Angstroms to about 50 Angstroms. The one or more quantum wells include InGaAs or InGaAsP. Various types of lasers can have the laser active region. Such a laser can be capable of emitting light having a wavelength of about 850 nm or +/−150 nm. As an example, a vertical cavity surface-emitting laser (VCSEL) having the laser active region. The laser may also be a tunneling laser.