The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2015
Filed:
Mar. 05, 2013
Qualcomm Incorporated, San Diego, CA (US);
Nishith Desai, San Diego, CA (US);
Rakesh Vattikonda, San Diego, CA (US);
Changho Jung, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Various aspects of a fast, energy efficient write driver capable of efficient operation in a dual-voltage domain memory architecture are provided herein. Specifically, various aspects of the write driver described herein combine a high speed driver with voltage level shifting capabilities that may be implemented efficiently in reducing use of silicon area while using lower power. The write driver circuit shifts or adjusts voltage levels between a first voltage domain to a second voltage domain. In one example, the write driver circuit is coupled to a global write bitline and a local write bitline that is coupled to one or more bitcells (of SRAM memory). The write driver circuit converts a first voltage level at the global write bitline to a second voltage level at the local write bitline during a write operation.