The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2015

Filed:

Jun. 02, 2011
Applicants:

Sunay Shah, Oxford, GB;

Patrick Zebedee, Oxford, GB;

Benjamin James Hadwen, Oxford, GB;

Michael James Brownlow, Oxford, GB;

Inventors:

Sunay Shah, Oxford, GB;

Patrick Zebedee, Oxford, GB;

Benjamin James Hadwen, Oxford, GB;

Michael James Brownlow, Oxford, GB;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G09G 3/36 (2006.01); G06F 3/038 (2013.01);
U.S. Cl.
CPC ...
G09G 3/3648 (2013.01); G09G 3/3659 (2013.01); G09G 2300/0465 (2013.01); G09G 2300/0814 (2013.01); G09G 2300/0833 (2013.01);
Abstract

A charge storage circuit for a pixel comprises a charge storage node. First and second series-connected transistors () are provided for selectively isolating the charge storage node from a first voltage input (,SL) for supplying a data voltage. The circuit is provided with a voltage follower circuit for replicating a voltage at the charge storage node () at another node in the circuit thereby to reduce the drain-source voltage across the second transistor (). The first transistor forms part of the voltage follower circuit.


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