The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2015
Filed:
Dec. 13, 2013
Chung-ki Min, Pyeongtaek-si, KR;
Chung-Ki Min, Pyeongtaek-si, KR;
Abstract
In a semiconductor device having an insulating layer structure and method of manufacturing the same, a substrate including a first region and a second region may be provided. A first pattern structure may be formed on the first region of the substrate. A second pattern structure may be formed on the second region of the substrate, and have a height that is greater than the height of the first pattern structure. An insulating layer structure is formed on the first and second pattern structures and includes a protrusion near an area at which the first and second regions meet each other. An upper surface of the insulating interlayer structure is higher than a top surface of the second pattern structure. The protrusion may have at least one side surface having a staircase shape. A planarized insulating interlayer may be formed without substantial damage to the infrastructure by using the insulating layer structure in accordance with example embodiments.