The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2015
Filed:
Dec. 30, 2013
Commissariat a L'energie Atomique ET Aux Ene Alt, Paris, FR;
Johan Rothman, Grenoble, FR;
Abstract
The invention relates to an avalanche photodiode-type semiconductor structure () intended to receive electromagnetic radiation in a given wavelength. The structure comprises a first semiconductor zone () with a first type of conductivity with a first longitudinal face (), said first zone () being made of mercury-cadmium telluride of the CdHgTe type with a cadmium proportion x that is varied. The structure () also comprises at least one second semiconductor zone () in contact with the first zone (), and a third semiconductor zone () in contact with the second zone (). The first zone () comprises a doping element, such as arsenic, of which the concentration is varied alternately in a direction substantially perpendicular to the first longitudinal face () between a so-called low concentration and a so-called high concentration. The invention also relates to a process for producing a structure () according to the invention.