The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2015
Filed:
Feb. 01, 2013
Applicant:
Rohm Co., Ltd., Kyoto, JP;
Inventor:
Goro Nakatani, Kyoto, JP;
Assignee:
Rohm Co., Ltd., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01L 9/12 (2006.01); B81B 3/00 (2006.01); G01L 1/14 (2006.01); H01L 21/311 (2006.01); B81C 1/00 (2006.01); G01L 9/00 (2006.01);
U.S. Cl.
CPC ...
G01L 1/148 (2013.01); H01L 21/311 (2013.01); B81C 1/00047 (2013.01); G01L 9/0073 (2013.01); G01L 9/0045 (2013.01); B81B 2201/0264 (2013.01);
Abstract
A capacitive pressure sensor includes: a semiconductor substrate having a reference pressure chamber formed therein; a diaphragm which is formed in a front surface of the semiconductor substrate and has a ring-like peripheral through hole penetrating between the front surface of the semiconductor substrate and the reference pressure chamber and defining an upper electrode and a plurality of central through holes; a peripheral insulating layer which fills the peripheral through hole and electrically isolates the upper electrode from other portions of the semiconductor substrate; and a central insulating layer which fills the central through holes.