The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2015
Filed:
Aug. 31, 2012
Yi He, Fremont, CA (US);
Xiang LU, Palo Alto, CA (US);
Albert Bergemont, Palo Alto, CA (US);
Maxim Integrated Products, Inc., San Jose, CA (US);
Abstract
N-channel multi-time programmable memory devices having an N-conductivity type substrate, first and second P-conductivity type wells in the N-conductivity type substrate, N-conductivity type source and drain regions formed in the first P-conductivity type well, the source and drain regions being separated by a channel region, an oxide layer over the N-conductivity type substrate; and a floating gate extending over the channel region and over the second P-conductivity type well in the N-conductivity type substrate, the multi-time programmable memory cell being programmable by hot electron injection and erasable by hot hole injection.