The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2015

Filed:

Jun. 27, 2012
Applicants:

Paul A. Saunier, Dallas, TX (US);

Edward A. Beam, Iii, Plano, TX (US);

Inventors:

Paul A. Saunier, Dallas, TX (US);

Edward A. Beam, III, Plano, TX (US);

Assignee:

TriQuint Semiconductor, Inc., Hillsboro, OR (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
Abstract

Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device may include a buffer layer disposed on a substrate, the buffer layer including gallium (Ga) and nitrogen (N), a barrier layer disposed on the buffer layer, the barrier layer including aluminum (Al) and nitrogen (N), a regrown structure disposed in and epitaxially coupled with the barrier layer, the regrown structure including nitrogen (N) and at least one of aluminum (Al) or gallium (Ga) and being epitaxially deposited at a temperature less than or equal to 600° C., and a gate terminal disposed in the barrier layer, wherein the regrown structure is disposed between the gate terminal and the buffer layer. Other embodiments may be described and/or claimed.


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