The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2015
Filed:
Nov. 21, 2011
Applicants:
Kevin Peter Homewood, Surrey, GB;
Russell Mark Gwilliam, Surrey, GB;
Inventors:
Kevin Peter Homewood, Surrey, GB;
Russell Mark Gwilliam, Surrey, GB;
Assignee:
The University of Surrey, Surrey, GB;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 29/26 (2006.01); H01L 31/12 (2006.01); H01L 33/00 (2010.01); H01L 31/0288 (2006.01); H01L 33/34 (2010.01); H01S 5/30 (2006.01); H01L 31/103 (2006.01); H01L 31/105 (2006.01); H01L 31/107 (2006.01); H01L 31/108 (2006.01); H01S 3/16 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0288 (2013.01); H01L 33/34 (2013.01); H01L 33/343 (2013.01); H01S 5/305 (2013.01); H01L 31/103 (2013.01); H01L 31/105 (2013.01); H01L 31/107 (2013.01); H01L 31/108 (2013.01); H01S 3/1628 (2013.01); H01S 3/1603 (2013.01); H01S 3/1618 (2013.01); Y02E 10/50 (2013.01);
Abstract
Optoelectronic devices have a photoactive region containing semiconductor material doped with ions of a rare earth element. Characteristic transitions associated with internal energy states of the rare earth dopant ions are modified by direct interaction of those states with an energy state in the semiconductor band structure. Euand Ybdoped silicon LEDs and photodetectors are described. The LEDs are emissive of radiation in the wavelength range 1300 nm to 1600 nm, important in optical communications.