The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2015

Filed:

Mar. 15, 2011
Applicants:

Piotr Perlin, Warsaw, PL;

Marcin Sarzyński, Zabki, PL;

Michal Leszczyński, Mysiadlo, PL;

Robert Czernecki, Kalina, PL;

Tadeusz Suski, Nowy Prażmów, PL;

Inventors:

Piotr Perlin, Warsaw, PL;

Marcin Sarzyński, Zabki, PL;

Michal Leszczyński, Mysiadlo, PL;

Robert Czernecki, Kalina, PL;

Tadeusz Suski, Nowy Prażmów, PL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 29/40 (2006.01); B82Y 20/00 (2011.01); C30B 25/18 (2006.01); C30B 33/00 (2006.01); C30B 33/12 (2006.01); H01L 21/02 (2006.01); H01S 5/343 (2006.01); H01L 29/20 (2006.01); H01L 33/00 (2010.01); H01S 5/02 (2006.01); H01S 5/20 (2006.01); H01S 5/32 (2006.01); H01S 5/34 (2006.01); H01S 5/40 (2006.01);
U.S. Cl.
CPC ...
C30B 29/406 (2013.01); B82Y 20/00 (2013.01); C30B 25/18 (2013.01); C30B 33/00 (2013.01); C30B 33/12 (2013.01); H01L 21/02389 (2013.01); H01L 21/0243 (2013.01); H01L 21/02433 (2013.01); H01L 21/0254 (2013.01); H01S 5/34333 (2013.01); H01L 29/2003 (2013.01); H01L 33/007 (2013.01); H01L 33/0075 (2013.01); H01S 5/0202 (2013.01); H01S 5/0207 (2013.01); H01S 5/2009 (2013.01); H01S 5/3202 (2013.01); H01S 5/3403 (2013.01); H01S 5/4087 (2013.01); H01S 2304/04 (2013.01);
Abstract

A surface of a substrate consists of a plurality of neighboring stripes. Longer edges of the flat surfaces are parallel one to another and planes of these surfaces are disoriented relatively to the crystallographic plane of gallium nitride crystal defined by Miller-Bravais indices (0001), (11-22) or (11-20). The disorientation angle of each of the flat surfaces is between 0 and 3 degrees and is different for each pair of neighboring flat surfaces. The substrate according to the invention allows epitaxial growth of a layered AlInGaN structure by a MOCVD or MBE method which allow to obtain a non-absorbing mirrors laser diode emitting a light in the wavelength from 380 to 550 nm.


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