The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2015
Filed:
Jul. 01, 2013
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Yan Ye, Saratoga, CA (US);
Harvey You, Mountain View, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/786 (2006.01); H01L 21/283 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 21/283 (2013.01); H01L 29/24 (2013.01);
Abstract
Embodiments disclosed herein generally relate to thin film transistors with one or more trenches to control the threshold voltage and off-current and methods of making the same. In one embodiment, a semiconductor device can include a substrate comprising a surface with a thin film transistor formed thereon, a first passivation layer formed over the thin film transistor, a trench formed within the first passivation layer and a second passivation layer formed over the first passivation layer and within the trench.