The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2015
Filed:
Jun. 28, 2013
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Ha-Jin Lim, Seoul, KR;
Weon-Hong Kim, Suwon-si, KR;
Abstract
Provided are a method of forming a dielectric and a method of fabricating a semiconductor device. The method includes forming a preliminary dielectric including Hf, O and an 'A' element on an underlying layer. The preliminary dielectric is formed in an amorphous structure or a mixed structure of an amorphous structure and an 'M' crystalline structure. The “A” element about 1 at % to about 5 at % of the total content of the “A” element and Hf in the preliminary dielectric. Through a nitridation process, nitrogen is added to the preliminary dielectric. The nitrogen-containing dielectric is changed into a dielectric having a “T” crystalline structure through a phase transition process, wherein the “T” crystalline structure is different from the “M” crystalline structure. An upper layer is formed on the “T” crystalline dielectric.