The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2015
Filed:
Aug. 09, 2012
Applicants:
Kevin Peter Homewood, Surrey, GB;
Russell Mark Gwilliam, Surrey, GB;
Inventors:
Kevin Peter Homewood, Surrey, GB;
Russell Mark Gwilliam, Surrey, GB;
Assignee:
The University of Surrey, Surrey, GB;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/425 (2006.01); H01L 21/265 (2006.01); H01L 33/00 (2010.01); H01L 29/36 (2006.01); H01L 33/02 (2010.01); H01S 5/30 (2006.01); H01L 33/34 (2010.01);
U.S. Cl.
CPC ...
H01L 21/26513 (2013.01); H01L 33/0054 (2013.01); H01L 29/36 (2013.01); H01L 33/025 (2013.01); H01S 5/3086 (2013.01); H01L 33/343 (2013.01);
Abstract
A method of manufacture of an optoelectronic device includes the steps of: providing or forming a body of crystalline silicon containing substitutional carbon atoms, and irradiating said body of crystalline silicon with protons (H) to create radiative defect centers in a photoactive region of the device, wherein at least some of said defect centers are G-center complexes having the form C—Si—C, where Cis a substitutional carbon atom and S¾ is an interstitial silicon atom. An optoelectronic device () manufactured using the method is described.