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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8975119 B1

PDFFull Text
Date of Patent:
Mar. 10, 2015

Filed:

Mar. 12, 2013

Manufacturing method of semiconductor device

Applicant:

Renesas Electronics Corporation, Kanagawa, JP;

Inventors:

Katsuhito Kamachi, Itami, JP;

Takanori Okita, Kanagawa, JP;

Assignee:

Renesas Electronics Corporation, Kanagawa, JP;

Attorney:

Mattingly & Malur, PC

Primary Examiner:

Zandra Smith

Assistant Examiner:

Andre′ C Stevenson

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/50 (2006.01); H01L 23/00 (2006.01); H01L 23/495 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
H01L 21/50 (2013.01); H01L 24/97 (2013.01); H01L 23/49562 (2013.01); H01L 21/4842 (2013.01); H01L 2924/13091 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/97 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48465 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/83439 (2013.01); H01L 2224/85439 (2013.01); H01L 2224/92247 (2013.01); H01L 2924/0132 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/83 (2013.01); H01L 24/85 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29144 (2013.01); H01L 2224/29339 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/83805 (2013.01); H01L 2224/8385 (2013.01); H01L 2224/85207 (2013.01); H01L 2924/07811 (2013.01); H01L 2224/29101 (2013.01);
Abstract

A manufacturing yield of a semiconductor device including a power transistor is improved. When forming a tip portion LEof a first lead, a tip portion LEof a second lead, and a tip portion LEof a third lead by using a spanking die SDM, the tip portion LEof the first lead, the tip portion LEof the second lead, and the tip portion LEof the third lead are pressed by an upper surface of a protrusion portion provided on a pressing surface of a lower die SDand a bottom surface of a groove portion provided in a pressing surface of an upper die SU, and a bent portion of the second lead and a bent portion of the third lead are pressed by a flat pressing surface of the lower die SDand a flat pressing surface of the upper die SU

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