The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2015

Filed:

Sep. 27, 2012
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Tobias Gebuhr, Regensburg, DE;

Hans-Christoph Gallmeier, Regensburg, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/62 (2010.01); H01L 23/00 (2006.01); H01L 33/44 (2010.01); H01L 33/50 (2010.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 24/24 (2013.01); H01L 24/82 (2013.01); H01L 33/44 (2013.01); H01L 33/50 (2013.01); H01L 2933/0066 (2013.01); H01L 2924/01029 (2013.01);
Abstract

A method for producing an optoelectronic device is provided, in which a luminescent diode chip () is mounted on a base surface () on the first terminal area () of a carrier (). An electrically insulating layer () is applied to side faces () of the luminescent diode chip (). An electrically conductive layer (), which leads from a second terminal contact () of the luminescent diode chip () over the electrically insulating layer () to a second terminal area () on the carrier (), is subsequently applied. A photoresist layer () is applied to the electrically conductive layer (), which photoresist layer () is exposed by application of an electrical voltage to the luminescent diode chip () so that the luminescent diode chip () emits radiation (). After development of the photoresist layer (), a portion of the electrically conductive layer () arranged on the radiation exit surface () is removed by means of an etching process, in which the photoresist layer () serves as a mask.


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