The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2015

Filed:

Jul. 17, 2013
Applicant:

Nichia Corporation, Anan-shi, Tokushima, JP;

Inventors:

Hiroaki Matsumura, Tokushima, JP;

Takashi Abe, Anan, JP;

Kyosuke Nakagawa, Tokushima, JP;

Assignee:

Nichia Corporation, Anan-Shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/40 (2010.01); H01L 33/38 (2010.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H01L 33/40 (2013.01); H01L 33/38 (2013.01); H01L 33/44 (2013.01); H01L 2933/0016 (2013.01);
Abstract

A method of manufacturing a semiconductor light emitting element includes preparing a semiconductor stacked layer structure by stacking a first semiconductor layer and a second semiconductor layer in this order, forming a second electrode and an insulating layer in this order on the second semiconductor layer, exposing the first semiconductor layer by removing a part of the second semiconductor layer, forming a first electrode by forming a metal layer on the exposed first semiconductor layer and the insulating layer and flattening a surface of the metal layer, forming a first electrode-side bonding layer having a top layer made of Au on the first electrode, preparing a support substrate including a support substrate-side bonding layer having a top surface made of Au, and bonding the first electrode-side bonding layer and the support substrate-side bonding layer.


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