The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2015
Filed:
Jul. 22, 2010
Applicant:
Alain Straboni, Buxerolles, FR;
Inventor:
Alain Straboni, Buxerolles, FR;
Assignee:
S'Tile, Buxerolles, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 21/66 (2006.01); H01L 21/687 (2006.01); F27D 3/00 (2006.01); H01L 21/67 (2006.01); H01L 21/677 (2006.01); C30B 1/02 (2006.01); C30B 29/06 (2006.01); C30B 35/00 (2006.01); C30B 1/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02532 (2013.01); C30B 1/02 (2013.01); C30B 29/06 (2013.01); C30B 35/00 (2013.01); C30B 35/002 (2013.01); C30B 1/12 (2013.01); F27D 3/0084 (2013.01); H01L 21/02667 (2013.01); H01L 21/67098 (2013.01); H01L 21/6776 (2013.01);
Abstract
The instant disclosure relates to a device and method for recrystallising a silicon wafer or a wafer comprising at least one silicon layer. The silicon wafer or the at least one silicon layer of the wafer is totally molten.