The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2015
Filed:
Sep. 06, 2011
Applicants:
Mikhail Baklanov, Veltem-Beisem, BE;
Quoc Toan Le, Namur, BE;
Laurent Souriau, Leuven, BE;
Patrick Verdonck, Zaventem, BE;
Inventors:
Mikhail Baklanov, Veltem-Beisem, BE;
Quoc Toan Le, Namur, BE;
Laurent Souriau, Leuven, BE;
Patrick Verdonck, Zaventem, BE;
Assignee:
IMEC, Leuven, BE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05H 1/00 (2006.01); B05D 3/06 (2006.01); B05D 3/02 (2006.01); C23C 16/40 (2006.01); C23C 16/56 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 21/316 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
C23C 16/401 (2013.01); C23C 16/56 (2013.01); H01L 21/02126 (2013.01); H01L 21/02203 (2013.01); H01L 21/0234 (2013.01); H01L 21/02348 (2013.01); H01L 21/3105 (2013.01); H01L 21/31633 (2013.01); H01L 21/7682 (2013.01); H01L 2221/1047 (2013.01);
Abstract
Methods for fabricating porous low-k materials are provided, such as plasma enhanced chemically vapor deposited (PE-CVD) and chemically vapor deposited (CVD) low-k films used as dielectric materials in between interconnect structures in semiconductor devices. More specifically, a new method is provided which results in a low-k material with significant improved chemical stability and improved elastic modulus, for a porosity obtained.