The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2015
Filed:
Dec. 21, 2010
Yuichi Otani, Tama, JP;
Takashi Nakagawa, Hachioji, JP;
Yuichi Otani, Tama, JP;
Takashi Nakagawa, Hachioji, JP;
Canon Anelva Corporation, Kawasaki-shi, JP;
Abstract
The present invention provides a reactive sputtering method and a reactive sputtering apparatus which suppress a film quality change caused by a temperature variation in continuous substrate processing. An embodiment of the present invention performs reactive sputtering while adjusting a flow rate of reactive gas according to the temperature of a constituent member facing a sputtering space. Specifically, a temperature sensor is provided on a shield and the flow rate is adjusted according to the temperature. Thereby, even when a degassing amount of a film adhering to the shield changes, a partial pressure of reactive gas can be set to a predetermined value. For a resistance change layer constituting a ReRAM, a perovskite material such as PrCaMn03 (PCMO), LaSrMnO3 (LSMO), and GdBaCoxOy (GBCO), a two-element type transition metal oxide material which has a composition shifted from a stoichiometric one, such as nickel oxide (NiO), vanadium oxide (V2O5), and the like are used.