The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2015
Filed:
Apr. 23, 2013
Arvind Kamath, Mountain View, CA (US);
Criswell Choi, Menlo Park, CA (US);
Patrick Smith, San Jose, CA (US);
Erik Scher, San Francisco, CA (US);
Jiang LI, San Jose, CA (US);
Arvind Kamath, Mountain View, CA (US);
Criswell Choi, Menlo Park, CA (US);
Patrick Smith, San Jose, CA (US);
Erik Scher, San Francisco, CA (US);
Jiang Li, San Jose, CA (US);
Thin Film Electronics ASA, Oslo, NO;
Abstract
High precision capacitors and methods for forming the same utilizing a precise and highly conformal deposition process for depositing an insulating layer on substrates of various roughness and composition are disclosed. The method generally includes the steps of depositing a first insulating layer on a metal substrate by atomic layer deposition (ALD); (b) forming a first capacitor electrode on the first insulating layer; and (c) forming a second insulating layer on the first insulating layer and on or adjacent to the first capacitor electrode. The methods provide an improved deposition process that produces a highly conformal insulating layer on a wide range of substrates, and thereby, an improved capacitor.