The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2015

Filed:

Jan. 13, 2012
Applicants:

Oleg A. Mukhanov, Putnam Valley, NY (US);

Alan M. Kadin, Princeton Junction, NJ (US);

Ivan P. Nevirkovets, Evanston, IL (US);

Igor V. Vernik, Yorktown Heights, NY (US);

Inventors:

Oleg A. Mukhanov, Putnam Valley, NY (US);

Alan M. Kadin, Princeton Junction, NJ (US);

Ivan P. Nevirkovets, Evanston, IL (US);

Igor V. Vernik, Yorktown Heights, NY (US);

Assignee:

Hypres, Inc., Elmsford, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 39/22 (2006.01); G11C 11/44 (2006.01); H01L 29/06 (2006.01); H01L 39/24 (2006.01);
U.S. Cl.
CPC ...
H01L 39/223 (2013.01); G11C 11/44 (2013.01); H01L 39/2493 (2013.01); Y10S 505/832 (2013.01);
Abstract

A superconducting memory cell includes a magnetic Josephson junction (MJJ) with a ferromagnetic material, having at least two switchable states of magnetization. The binary state of the MJJ manifests itself as a pulse appearing, or not appearing, on the output. A superconducting memory includes an array of memory cells. Each memory cell includes a comparator with at least one MJJ. Selected X and Y-directional write lines in their combination are capable of switching the magnetization of the MJJ. A superconducting device includes a first and a second junction in a stacked configuration. The first junction has an insulating layer barrier, and the second junction has an insulating layer sandwiched in-between two ferromagnetic layers as barrier. An electrical signal inputted across the first junction is amplified across the second junction.


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