The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8971103 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 03, 2015

Filed:

Mar. 13, 2013
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Anthony J. Annunziata, Stamford, CT (US);

Philip L. Trouilloud, Norwood, NJ (US);

Daniel Worledge, Cortlandt Manor, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); Y10S 977/933 (2013.01); Y10S 977/935 (2013.01);
Abstract

A technique is provided for a thermally assisted magnetoresistive random access memory device. The device has a synthetic antiferromagnetic layer disposed on an antiferromagnetic layer. The synthetic antiferromagnetic layer has a first ferromagnetic storage layer, a non-magnetic coupling layer disposed on the first ferromagnetic storage layer, and a second ferromagnetic storage layer disposed on the non-magnetic coupling layer. A non-magnetic tunnel barrier is disposed on the second ferromagnetic storage layer, and a ferromagnetic sense layer is disposed on the non-magnetic tunnel barrier. A first ferromagnetic critical temperature of the first ferromagnetic storage layer is higher than an antiferromagnetic critical temperature of the antiferromagnetic layer, is higher than a second ferromagnetic critical temperature of the second ferromagnetic storage layer, and is higher than a third ferromagnetic critical temperature of the ferromagnetic sense layer.


Find Patent Forward Citations

Annunziata, Anthony. (2015). Thermally-assisted mram with ferromagnetic layers with temperature dependent magnetization (U.S. Patent No. 8971103). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8971103

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