The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2015

Filed:

Jan. 31, 2011
Applicants:

Wei Yi, Mountain View, CA (US);

Muhammad Shakeel Qureshi, Santa Clara, CA (US);

Frederick Perner, Santa Barbara, CA (US);

Richard Carter, Los Altos, CA (US);

Inventors:

Wei Yi, Mountain View, CA (US);

Muhammad Shakeel Qureshi, Santa Clara, CA (US);

Frederick Perner, Santa Barbara, CA (US);

Richard Carter, Los Altos, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); H01L 27/10 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 13/0007 (2013.01); H01L 27/101 (2013.01); G11C 2013/0066 (2013.01); G11C 2013/0078 (2013.01); G11C 2213/32 (2013.01); G11C 2213/55 (2013.01); G11C 2213/77 (2013.01); G11C 2213/81 (2013.01);
Abstract

A method of switching a memristive device in a two-dimensional array senses a leakage current through the two-dimensional array when a voltage of half of a switching voltage is applied to a row line of the memristive device. A leakage compensation current is generated according to the sensed leakage current, and a switching current ramp is also generated. The leakage compensation current and the switching current ramp are combined to form a combined switching current, which is applied to the row line of the memristive device. When a resistance of the memristive device reaches a target value, the combined switching current is removed from the row line.


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