The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2015

Filed:

Feb. 27, 2013
Applicant:

Samsung Electro-mechanics Co., Ltd., Suwon, Gyunggi-do, KR;

Inventors:

Sang Hoon Ha, Gyunggi-do, KR;

Sung Hwan Park, Gyunggi-do, KR;

Sang Hee Kim, Gyunggi-do, KR;

Nam Heung Kim, Gyunggi-do, KR;

Hyo Gun Bae, Gyunggi-do, KR;

Assignee:

Samsung Electro-Mechanics Co., Ltd., Suwon, Gyunggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); H03K 17/16 (2006.01);
U.S. Cl.
CPC ...
H03K 17/16 (2013.01);
Abstract

There is provided a radio frequency switch circuit including a first switch circuit unit connected between a first node connected to a first signal port and a common node connected to a common port, and operated according to a first control signal, a second switch circuit unit connected between a second node connected to a second signal port and the common node and operated according to a second control signal having a phase opposite to that of the first control signal, a first shunt circuit unit connected between the second node and a common source node and operated according to the first control signal, a second shunt circuit unit connected between the first node and the common source node, and a source voltage generating unit generating a source voltage, wherein the source voltage is lower than a high level of the first control signal and higher than a ground potential.


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