The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2015

Filed:

Sep. 25, 2011
Applicant:

Atsushi Yoshida, Matsumoto, JP;

Inventor:

Atsushi Yoshida, Matsumoto, JP;

Assignee:

Fuji Electric Co., Ltd., Kawasaki-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2014.01); G01R 31/42 (2006.01); G01R 31/28 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2608 (2013.01); G01R 31/42 (2013.01); G01R 31/2628 (2013.01); G01R 31/2841 (2013.01);
Abstract

A semiconductor test device and method for sequentially carrying out tests including an AC test, DC test, and thermal resistance test on a power semiconductor device are provided. The semiconductor test device includes a holding unit that positions the power semiconductor device. Test units each generate a test signal for the power semiconductor device and determine a test result generated in response to the test signal. A connection unit switches between the test units and selectively connects the test units electrically to electrodes of the power semiconductor device. The connection unit is controlled such that the test units are sequentially connected to the power semiconductor device to perform a plurality of the tests. The connection unit may include parallel plate electrodes in proximity to each other across an insulating sheet. The parallel plate electrodes may connect the power semiconductor device to positive and negative power sources of the test unit.


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