The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2015

Filed:

Jan. 08, 2013
Applicant:

Fujitsu Semiconductor Limited, Yokohama-shi, Kanagawa, JP;

Inventor:

Hajime Wada, Kuwana, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/58 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); H01L 21/76885 (2013.01); H01L 23/562 (2013.01); H01L 23/564 (2013.01); H01L 23/585 (2013.01); H01L 2224/13 (2013.01);
Abstract

A semiconductor device includes: a substrate in which a product region and scribe regions are defined; a 1st insulation film formed above the substrate; a metal film in the 1st insulation film, disposed within the scribe regions in such a manner as to surround the product region; a 2nd insulation film formed on the 1st insulation film and the metal film; a 1st groove disposed more inside than the metal film in such a manner as to surround the product region, and reaching from a top surface of the 2nd insulation film to a position deeper than a top surface of the metal film; and a 2nd groove disposed more outside than the metal film in such a manner as to surround the metal film, and reaching from the top surface of the 2nd insulation film to a position deeper than the top surface of the metal film.


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