The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2015

Filed:

Feb. 28, 2013
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Eun-jung Kim, Daegu, KR;

Seung-pil Ko, Hwaseong-si, KR;

Yong-june Kim, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/762 (2006.01); H01L 29/861 (2006.01); H01L 21/308 (2006.01); H01L 27/102 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76232 (2013.01); H01L 29/861 (2013.01); H01L 21/3086 (2013.01); H01L 27/1021 (2013.01); H01L 27/224 (2013.01);
Abstract

A semiconductor device with buried word line structures and methods of forming the semiconductor device are provided. The semiconductor device includes a plurality of insulating line patterns extending in a direction in a substrate, a plurality of word lines alternately with ones of the plurality of insulating line patterns, the plurality of word lines extending in the direction and comprising a metal, a plurality of first doped regions on respective ones of the plurality of the word lines and between two adjacent ones of the plurality of insulating line patterns, an interlayer insulating film on the plurality of insulating line patterns and the plurality of first doped regions, the interlayer insulating film including a plurality of openings exposing upper surfaces of ones of the plurality of first doped regions and a plurality of second doped regions contacting respective ones of the plurality of first doped regions within the openings.


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