The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Nov. 07, 2008
Applicants:
Jong Mun Park, Graz, AT;
Verena Vescoli, Graz, AT;
Rainer Minixhofer, Unterpremstaetten, AT;
Inventors:
Assignee:
AMS AG, Unterpremstaetten, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7835 (2013.01); H01L 29/0634 (2013.01); H01L 29/0847 (2013.01); H01L 29/66659 (2013.01); H01L 29/0692 (2013.01); H01L 29/0878 (2013.01); H01L 29/66681 (2013.01); H01L 29/7816 (2013.01);
Abstract
A semiconductor body () comprises a field-effect transistor (). The field-effect transistor () comprises a drain region () of a first conduction type, a source region () of the first conduction type, a drift region () and a channel region () of a second conduction type which is opposite to the first conduction type. The drift region () comprises at least two stripes () of the first conduction type which extend from the drain region () in a direction towards the source region (). The channel region () is arranged between the drift region () and the source region ().