The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Oct. 18, 2010
Mikael T. Bjoerk, Affoltern am Albis, CH;
Joachim Knoch, Castrop-Rauxel, DE;
Heike E. Riel, Baech, CH;
Walter Heinrich Riess, Thalwil, CH;
Heinz Schmid, Waedenswil, CH;
Mikael T. Bjoerk, Affoltern am Albis, CH;
Joachim Knoch, Castrop-Rauxel, DE;
Heike E. Riel, Baech, CH;
Walter Heinrich Riess, Thalwil, CH;
Heinz Schmid, Waedenswil, CH;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor device and a method for fabricating the semiconductor device. The device includes: a doped semiconductor having a source region, a drain region, a channel between the source and drain regions, and an extension region between the channel and each of the source and drain regions; a gate formed on the channel; and a screening coating on each of the extension regions. The screening coating includes: (i) an insulating layer that has a dielectric constant that is no greater than about half that of the extension regions and is formed directly on the extension regions, and (ii) a screening layer on the insulating layer, where the screening layer screens the dopant ionization potential in the extension regions to inhibit dopant deactivation.