The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2015

Filed:

Nov. 02, 2011
Applicants:

Matthias Sabathil, Regensburg, DE;

Alexander Linkov, Regensburg, DE;

Christopher Kölper, Regensburg, DE;

Martin Straβburg, Donaustauf, DE;

Norwin Von Malm, Nittendorf, DE;

Inventors:

Matthias Sabathil, Regensburg, DE;

Alexander Linkov, Regensburg, DE;

Christopher Kölper, Regensburg, DE;

Martin Straβburg, Donaustauf, DE;

Norwin von Malm, Nittendorf, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/22 (2006.01); H01L 33/02 (2010.01); H01L 33/20 (2010.01); H01L 33/50 (2010.01); H01L 33/08 (2010.01); H01L 33/24 (2010.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 33/02 (2013.01); H01L 33/20 (2013.01); H01L 33/508 (2013.01); H01L 33/08 (2013.01); H01L 33/24 (2013.01); H01L 2933/0041 (2013.01); B82Y 40/00 (2013.01);
Abstract

An optoelectronic semiconductor chip includes a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, and a conversion layer disposed on the radiation emission side of the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength, the radiation emission side of the semiconductor layer stack has a first nanostructuring, and the conversion layer is disposed in this first nanostructuring.


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