The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Oct. 07, 2011
Applicants:
Yosuke Oseki, Kanagawa, JP;
Yoshimasa Sakai, Kanagawa, JP;
Akira Ohno, Kanagawa, JP;
Inventors:
Assignee:
Mitsubishi Chemical Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 51/40 (2006.01); H01L 21/336 (2006.01); H01L 29/417 (2006.01); H01L 51/10 (2006.01); H01L 29/78 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41725 (2013.01); H01L 51/105 (2013.01); H01L 29/78 (2013.01); H01L 51/0023 (2013.01);
Abstract
Provided is a field-effect transistor which has a high mobility and a low variation of mobility. A field-effect transistor at least comprising a substrate, a semiconductor layer, a source electrode, and a drain electrode is produced by forming the source electrode and/or the drain electrode so that the source electrode and/or the drain electrode has a taper shape in a cross-section which is parallel with a channel length direction and perpendicular to the substrate, and forming the semiconductor layer through coating process.