The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Jun. 30, 2011
Tomokazu Yokoi, Kanagawa, JP;
Kensuke Yoshizumi, Kanagawa, JP;
Tomokazu Yokoi, Kanagawa, JP;
Kensuke Yoshizumi, Kanagawa, JP;
Abstract
Provided is a structure to obtain a reliable electrical contact through a narrow contact hole formed in an insulating layer, which is required in the miniaturization of a semiconductor device. An exemplified structure includes a thin film transistor comprising: a lower electrode over and in contact with a semiconductor layer, the lower electrode comprising a metal or a metal compound; an insulating layer over the lower electrode, the insulating layer having a contact hole reaching the lower electrode; a conductive silicon whisker grown from a surface of the lower electrode; and an upper electrode over the insulating layer and in contact with the conductive silicon whisker. The ability of the conductive silicon whisker grown from the lower electrode to ohmically contact with the lower and upper electrodes leads to a reliable electrical contact between the thin film transistor and a wiring.