The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2015

Filed:

May. 29, 2013
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventor:

Ryuji Ohba, Kawasaki, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/12 (2013.01);
Abstract

According to one embodiment, a memory device includes first and second conductive layers, a variable resistance portion, and a multiple tunnel junction portion. The variable resistance portion is provided between the first and second conductive layers. The multiple tunnel junction portion is provided between the first conductive layer and the variable resistance portion, and includes first, second, and third tunnel insulating films, and first and second nanocrystal layers. The first nanocrystal layer between the first and second tunnel insulating films includes first conductive minute particles. The second nanocrystal layer between the second and third tunnel insulating films includes second conductive minute particles.


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