The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2015

Filed:

Dec. 18, 2009
Applicants:

Mariana Rodica Munteanu, Santa Clara, CA (US);

Erol Girt, Burnaby, CA;

Inventors:

Mariana Rodica Munteanu, Santa Clara, CA (US);

Erol Girt, Burnaby, CA;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 31/032 (2006.01); C23C 14/00 (2006.01); C23C 14/06 (2006.01); C23C 14/34 (2006.01); H01L 31/0749 (2012.01);
U.S. Cl.
CPC ...
H01L 31/0322 (2013.01); C23C 14/0057 (2013.01); C23C 14/0623 (2013.01); C23C 14/3492 (2013.01); H01L 31/0749 (2013.01); Y02E 10/541 (2013.01);
Abstract

In one example embodiment, a method includes sputtering one or more absorber layers over a substrate. In a particular embodiment, the substrate is pre-heated to a substrate temperature of at least approximately 300 degrees Celsius prior to the sputtering and during the sputtering of each of one or more of the absorber layers, and the sputtering of at least one of the absorber layers is performed in a sputtering atmosphere having a pressure of at least 0.5 Pascals. Additionally, in a particular embodiment, the sputtering of at least one of the absorber layers comprises sputtering from a sputter target that comprises a chalcogenide alloy that comprises copper (Cu) and one or more of sulfur (S), selenium (Se), or tellurium (Te).


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