The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8969199 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 03, 2015

Filed:

Oct. 15, 2013
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Lei Yuan, Cupertino, CA (US);

Jason Eugene Stephens, Cohoes, NY (US);

Li Yang, San Jose, CA (US);

Soo Han Choi, Pleasanton, CA (US);

Assignee:

Globalfoundries Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/312 (2006.01); H01L 21/033 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0334 (2013.01); H01L 21/76877 (2013.01);
Abstract

One illustrative method disclosed herein includes, among other things, patterning a hard mask layer using three patterned photoresist etch masks, wherein a first feature corresponding to a portion, but not all, of a cross-coupling gate contact structure is present in a first of the three patterned photoresist etch masks and a second feature corresponding to a portion, but not all, of the cross-coupling gate contact structure is present in a second or a third of the three patterned photoresist etch masks, patterning a layer of insulating material using the patterned hard mask layer as an etch mask, and forming a cross-coupling gate contact structure in a trench in the layer of insulating material.


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