The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Dec. 15, 2011
Ki-chul Kim, Gyeonggi-do, KR;
Jong-cheol Lee, Seoul, KR;
Heung-ahn Kwon, Gyeonggi-do, KR;
Hyun-wook Lee, Seoul, KR;
Ki-chul Kim, Gyeonggi-do, KR;
Jong-cheol Lee, Seoul, KR;
Heung-ahn Kwon, Gyeonggi-do, KR;
Hyun-wook Lee, Seoul, KR;
Abstract
Methods of manufacturing a semiconductor device including a multi-layer of dielectric layers may include forming a metal oxide layer on a semiconductor substrate and forming a multi-layer of silicate layers including metal atoms and silicon atoms, on the metal oxide layer. The multi-layer of silicate layers may include at least two metallic silicate layers having different silicon concentrations, which are a ratio of silicon atoms among all metal atoms and silicon atoms included in the metallic silicate layer.