The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Nov. 08, 2013
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Abstract
A method for manufacturing a photovoltaic cell with a selective emitter, including the steps of: depositing an antireflection layer including n-type dopants on an n- or p-type silicon substrate, said deposition being, performed in the presence of a chemical compound that accelerates the diffusion of n-type dopant atoms in said substrate; overdoping at least one area of the substrate to form at least one noverdoped emitter by local diffusion of the n dopants of at least one area of the antireflection layer; depositing at least one n-type conductive material on the at least one noverdoped emitter; and at least one p-type conductive material on the surface of the substrate opposite to that including the antireflection layer; forming the n contacts and the p contacts simultaneously to the forming of an nemitter by an anneal capable of diffusing within the substrate n dopants from the antireflection layer.