The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Jan. 17, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02263 (2013.01); H01L 21/02002 (2013.01); H01L 21/02381 (2013.01); H01L 21/02439 (2013.01); H01L 21/02458 (2013.01); H01L 21/02505 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02642 (2013.01);
Abstract
A method of manufacturing a large area gallium nitride (GaN) substrate includes forming a buffer layer on a silicon substrate, forming an insulation layer pattern on a rim of a top surface of the buffer layer, growing a GaN layer on the buffer layer, and removing the insulation layer pattern and a portion of the GaN layer and the silicon substrate.