The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2015

Filed:

Aug. 23, 2013
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Andreas Ploessl, Regensburg, DE;

Heribert Zull, Regensburg, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 21/304 (2006.01); H01L 31/18 (2006.01); H01L 21/66 (2006.01); H01L 33/00 (2010.01); H01L 33/20 (2010.01); H01L 31/0687 (2012.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 31/18 (2013.01); H01L 22/12 (2013.01); H01L 33/0095 (2013.01); H01L 33/20 (2013.01); H01L 31/06875 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method for producing singulated semiconductor components includes providing a starting substrate. An etching process is carried out to form depressions at a side of the starting substrate. The depressions are arranged in the region of the semiconductor components to be produced. Walls present between the depressions are arranged in the region of separating regions provided for severing the starting substrate. The method furthermore comprises forming a metallic layer on the side of the starting substrate with the depressions and walls and carrying out a further etching process for severing the starting substrate in the separating regions and forming the singulated semiconductor components.


Find Patent Forward Citations

Loading…