The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Mar. 14, 2013
Globalfoundries Inc., Grand Cayman, KY;
Maik Liebau, Dresden, DE;
Ronny Pfuetzner, Dresden, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
A method comprises forming a first layer of an electrically insulating material over a semiconductor structure. A recess is formed in the first layer of electrically insulating material. A capacitor layer stack is deposited over the first layer of electrically insulating material. The capacitor layer stack includes one or more bottom electrode layers, a dielectric layer and a top electrode layer, wherein a first portion of the capacitor layer stack is arranged in the recess and a second portion of the capacitor layer stack is arranged over a portion of the first layer of electrically insulating material adjacent the recess. A chemical mechanical polishing process is performed. The chemical mechanical polishing process removes the second portion of the capacitor layer stack, wherein the first portion of the capacitor layer stack is not removed.