The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Jun. 27, 2012
Applicants:
Yoon-dong Cho, Gyeonggi-do, KR;
Jong-hyun Park, Seoul, KR;
Soo-young Yoon, Gyeonggi-do, KR;
Mi-jung Lee, Gyeonggi-do, KR;
Jae-kyung Choi, Gyeonggi-do, KR;
Inventors:
Yoon-dong Cho, Gyeonggi-do, KR;
Jong-Hyun Park, Seoul, KR;
Soo-Young Yoon, Gyeonggi-do, KR;
Mi-Jung Lee, Gyeonggi-do, KR;
Jae-kyung Choi, Gyeonggi-do, KR;
Assignee:
LG Display Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/40 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of fabricating a thin film transistor substrate includes: forming a polymer layer on a glass substrate; forming a passivation layer on the polymer layer; forming a thin film transistor array on the passivation layer; and separating the glass substrate from the polymer layer by irradiating a laser from a rear surface of the glass substrate.