The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Mar. 13, 2013
Princeton Lightwave, Inc., Cranbury, NJ (US);
Mark Allen Itzler, Princeton, NJ (US);
Princeton Lightwave, Inc., Cranbury, NJ (US);
Abstract
Methods for forming a buried p-n junction and avalanche photodiodes incorporating same are disclosed. The method includes forming a well in a semiconductor layer, wherein a depth of the well is selected as a function of the desired shape of the p-n junction in the edge region of the avalanche photodiode. A diffusion mask is then formed on the semiconductor layer, wherein the diffusion mask includes at least two openings per APD formed, wherein one opening is a diffusion window and the other is a diffusion sink. The depth of the p-n junction in the active region of the APD is based, in part, on an attribute of the diffusion mask relating to the diffusion sink.