The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Sep. 20, 2012
Applicant:
Sharp Kabushiki Kaisha, Osaka, JP;
Inventors:
Tohru Sonoda, Osaka, JP;
Shoji Okazaki, Osaka, JP;
Hiromitsu Katsui, Osaka, JP;
Tetsunori Tanaka, Osaka, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/40 (2010.01); H01L 51/00 (2006.01); H05B 33/28 (2006.01); H01L 27/15 (2006.01); H01L 33/42 (2010.01);
U.S. Cl.
CPC ...
H01L 33/405 (2013.01); H01L 51/0023 (2013.01); H05B 33/28 (2013.01); H01L 27/156 (2013.01); H01L 33/42 (2013.01); H01L 2251/308 (2013.01);
Abstract
An IZO layer () is formed on an a-ITO layer (), and resist patterns (R,G) having different film thicknesses are formed in at least sub-pixels (R,G). The a-ITO layer () and the IZO layer () are etched by utilizing (i) a reduction in thickness of the resist patterns (R,G) by ashing and (ii) a change in etching tolerance due to transformation from the a-ITO layer () into a p-ITO layer ().