The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2015

Filed:

Jun. 29, 2011
Applicants:

Vincent Agache, St Martin le Vinoux, FR;

Antoine Hoang, Grenoble, FR;

Françoise Vinet, Grenoble, FR;

Inventors:

Vincent Agache, St Martin le Vinoux, FR;

Antoine Hoang, Grenoble, FR;

Françoise Vinet, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 33/00 (2006.01); G03F 7/24 (2006.01); B81C 1/00 (2006.01); F04B 19/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/24 (2013.01); B81C 1/00206 (2013.01); F04B 19/006 (2013.01); B81B 2201/0214 (2013.01); B81B 2201/058 (2013.01); B81B 2201/06 (2013.01); B81C 2201/0154 (2013.01);
Abstract

The present invention relates to a method for functionalizing fluid lines () in a micromechanical device, the walls of which include an opaque layer. For this purpose, the invention provides a method for functionalizing a micromechanical device provided with a fluid line including a peripheral wall () having a surface () outside the line and an inner surface () defining a space () in which a fluid can circulate, the peripheral wall at least partially including a silicon layer (). The method includes the following steps: a) providing a device, the peripheral wall () of which at least partially includes a silicon layer () having, at least locally, a thickness (e) of more than 100 nm and less than 200 nm, advantageously of 160 to 180 nm; c) silanizing at least the inner surface of the fluid line; d) the localized, selective photo-deprotection on at least the inner surface of the silanized device by exposing the peripheral wall () at the point at which said wall has a thickness (e) of more than 100 nm and less than 200 nm, advantageously of 160 to 180 nm.


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