The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Oct. 11, 2010
Applicants:
Arnab Basu, Durham, GB;
Max Robinson, Durham, GB;
Ben Cantwell, County Durham, GB;
Andy Brinkman, Durham, GB;
Inventors:
Arnab Basu, Durham, GB;
Max Robinson, Durham, GB;
Ben Cantwell, County Durham, GB;
Andy Brinkman, Durham, GB;
Assignee:
Kromek Limited, Sedgefield, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 21/02 (2006.01); H01L 21/02 (2006.01); C30B 11/00 (2006.01); C30B 29/48 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02568 (2013.01); C30B 11/00 (2013.01); C30B 29/48 (2013.01); H01L 21/02378 (2013.01); H01L 21/02381 (2013.01); H01L 21/02395 (2013.01); H01L 21/02474 (2013.01); H01L 21/02477 (2013.01); H01L 21/0248 (2013.01); H01L 21/02502 (2013.01); H01L 21/02505 (2013.01); H01L 21/0251 (2013.01); H01L 21/02562 (2013.01); H01L 21/02617 (2013.01);
Abstract
A structure including a substrate, an intermediate layer provided and formed directly onto the substrate, a transition region, and a group II-VI bulk crystal material provided and formed as an extension of the transition region. The transition region acts to change the structure from the underlying substrate to that of the bulk crystal. In a method of manufacture, a similar technique can be used for growing the transition region and the bulk crystal layer.