The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Mar. 17, 2011
Yoshiyuki Shioyama, Yokkaichi, JP;
Yoshiyuki Shioyama, Yokkaichi, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A defect analyzing method includes acquiring a position and a size of a defect obtained in a defect inspection of a semiconductor device and a waveform of a reflected light in a region which includes the defect, the waveform being obtained in an optical inspection; acquiring process step information which includes a plurality of process steps to manufacture the semiconductor device and a processing content per the process step; performing a process simulation of the semiconductor device based on the position and the size of the defect and the process step information; performing an optical simulation on a result of the process simulation thereby to generate a waveform of a reflected light; calculating a similarity degree between the acquired waveform of the reflected light and the generated waveform of the reflected light; and judging whether or not the calculated similarity degree exceeds a threshold value registered in advance.