The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2015

Filed:

Feb. 25, 2013
Applicant:

Ocz Technology Group Inc., San Jose, CA (US);

Inventor:

Franz Michael Schuette, Colorado Springs, CO (US);

Assignee:

OCZ Storage Solutions Inc., San Jose, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); H01L 21/02 (2006.01); B82Y 10/00 (2011.01); G11C 13/02 (2006.01); H01L 29/68 (2006.01); H01L 29/16 (2006.01); B82Y 99/00 (2011.01);
U.S. Cl.
CPC ...
G11C 7/00 (2013.01); H01L 21/02107 (2013.01); B82Y 10/00 (2013.01); G11C 13/025 (2013.01); H01L 29/685 (2013.01); H01L 29/1606 (2013.01); B82Y 99/00 (2013.01); G11C 2213/35 (2013.01);
Abstract

Memory technology adapted to store data in a binary format. Such technology includes a semiconductor memory device having memory cells, each having a substrate and at least three graphene layers that are oriented to define a graphene stack disposed in a plane. The graphene stack of each memory cell is connected to a bit line and to a ground connection so that a conductive path is defined in the plane of the graphene stack. The in-plane conductivity of the graphene stack of each memory cell is altered during programming of the memory cell to define a binary value of bits stored in the memory cell.


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