The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Mar. 09, 2012
Douglas P. Sheppard, Trophy Club, TX (US);
Douglas P. Sheppard, Trophy Club, TX (US);
Other;
Abstract
A memory cell system/method incorporating reduced transistor counts and/or improved design-for-manufacturability (DFM) is disclosed. The system/method incorporates cross-coupled feedthru ()/feedback () amplifiers to implement memory cell state memory, wherein the feedback amplifier incorporates a multi-state output drive capability () allowing the memory cell to be read/written using only one access device () connected to the output () of the feedthru () amplifier. The multi-state output drive capability () modulates the feedback amplifier () drive strength to enable reading/writing of the feedthru amplifier () state with greatly reduced memory cell input fan-in requirements. The invention anticipates replacement of traditional DP/8T/6T/4T memory cell structures with corresponding 6T/6T/5T/3T memory cell configurations, resulting in a 16%-25% transistor reduction depending on memory array application context.