The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2015

Filed:

May. 05, 2011
Applicants:

Winfried Hoffmuller, Bad Tolz, DE;

Theodor Burchard, Gotting, DE;

Michael Rahm, Bad Tolz, DE;

Josef Schinabeck, Gmund, DE;

Manfred Heim, Bad Tolz, DE;

Andreas Rauch, Ohlstadt, DE;

Christian Fuhse, Otterfing, DE;

Inventors:

Winfried Hoffmuller, Bad Tolz, DE;

Theodor Burchard, Gotting, DE;

Michael Rahm, Bad Tolz, DE;

Josef Schinabeck, Gmund, DE;

Manfred Heim, Bad Tolz, DE;

Andreas Rauch, Ohlstadt, DE;

Christian Fuhse, Otterfing, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B 27/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for producing a microstructure on a carrier by: (a) manufacturing a donor foil by forming an embossed structure with elevations and depressions in a first foil material and applying a transfer layer to the embossed structure, (b) manufacturing an acceptor foil by applying an adhesive layer to a second foil material, (c) laminating the donor foil and the acceptor foil by means of the adhesive layer, the transfer layer on the elevations of the embossed structure bonding to the adhesive layer, and (d) transferring the bonded regions of the transfer layer to the acceptor foil by separating the donor foil and the acceptor foil from each other, thereby forming in the acceptor foil a first microstructure from the transferred regions of the transfer layer, and/or forming in the donor foil a second microstructure complementary to the first microstructure.


Find Patent Forward Citations

Loading…