The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Dec. 13, 2010
Sung-in RO, Yongin, KR;
Ji-yong Park, Yongin, KR;
Kyung-min Park, Yongin, KR;
Jin-suk Park, Yongin, KR;
Seong-yeun Kang, Yongin, KR;
Sung-In Ro, Yongin, KR;
Ji-Yong Park, Yongin, KR;
Kyung-Min Park, Yongin, KR;
Jin-Suk Park, Yongin, KR;
Seong-Yeun Kang, Yongin, KR;
Samsung Display Co., Ltd., Giheung-Gu, Yongin, Gyeonggi-Do, KR;
Abstract
A thin film transistor, a manufacturing method thereof, and a display device having the same are disclosed. The thin film transistor includes a semiconductor layer formed on a substrate, a gate insulating layer formed on the substrate including the semiconductor layer, a gate electrode formed on the gate insulating above the semiconductor layer, source and drain electrodes connected to the semiconductor layer, and 3.5 to 4.5 protrusions formed on the semiconductor layer overlapped with the gate electrode. Malfunction of the thin film transistor and inferior image quality of the display device can be prevented by adjusting the number of protrusions to minimize leakage current and defects.